Polycrystalline Pentacene Based Organic Thin Film Transistors

Metal-insulator-semiconductor organic thin film transistors (OTFTs) have been fabricated by the process of vacuum evaporation on glass substrates using pentacene (C22H14) as the active semiconductor and rare earth oxide viz. Dy2O3 as the gate insulator. The XRD of the pentacene thin films have been carried out and found to be polycrystalline in nature. The I-V characteristics of the OTFTs have been studied and analysed. The fabricated OTFTs are found to be p-type in nature and yielded highest field effect hole mobility of 9.2x10-3 cm2V-1s-1. Our work demonstrates that the rare earth oxides are the promising gate dielectric materials for (OTFTs).